Infineon Technologies AG Single Bipolar Transistors BCX41E6327HTSA1

Description
Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BCX41E6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BCX41E6327HTSA1TR-ND
Single Bipolar Transistors BCX41E6327HTSA1TR-ND
Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23

Buy Now Datasheet
Single Bipolar Transistors - BCX41E6327HTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BCX41E6327HTSA1DKR-ND
Single Bipolar Transistors BCX41E6327HTSA1DKR-ND
Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23

Buy Now Datasheet
Single Bipolar Transistors - BCX41E6327HTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BCX41E6327HTSA1CT-ND
Single Bipolar Transistors BCX41E6327HTSA1CT-ND
Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23

Bipolar (BJT) Transistor NPN 125V 800mA 100MHz 330mW Surface Mount PG-SOT23

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BCX41E6327HTSA1 - 1022791-BCX41E6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BCX41E6327HTSA1
1022791-BCX41E6327HTSA1
TRANSISTORS - Transistors (BJT) - Single - BCX41E6327HTSA1 1022791-BCX41E6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1022791-BCX41E6327HT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 100MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT23-3 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 125V Max Vce (sat): 900mV @ 30mA, 300mA Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 40 @ 200mA, 1V Maximum Power Dissipation: 330mW Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1022791-BCX41E6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 100MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT23-3
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 125V
Max Vce (sat): 900mV @ 30mA, 300mA
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 40 @ 200mA, 1V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore, Singapore
125V 0.8A SOT23 Bipolar Transistor
276-BCX41E6327HTSA1
125V 0.8A SOT23 Bipolar Transistor 276-BCX41E6327HTSA1
TRANS NPN 125V 0.8A SOT23 Product overview: BCX41E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125V, 0.8A, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 125V, 0.8A, SOT23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCX41E6327HTSA1 can be used for catalog matching and distributor lookup.

TRANS NPN 125V 0.8A SOT23 Product overview: BCX41E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125V, 0.8A, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 125V, 0.8A, SOT23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BCX41E6327HTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCX41E6327HTSA1
Bipolar Transistors - BJT BCX41E6327HTSA1
Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Bipolar Transistors - BJT NPN Silicn AF/SWITCH TRANSISTOR

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCX41E6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCX41E6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCX41E6327HTSA1
TRANS NPN 125V 0.8A SOT23

TRANS NPN 125V 0.8A SOT23

Supplier's Site
Single Bipolar Transistors - BCX41E6327HTSA1 - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
BCX41E6327HTSA1
Single Bipolar Transistors BCX41E6327HTSA1
TRANS NPN 125V 0.8A SOT23

TRANS NPN 125V 0.8A SOT23

Supplier's Site Datasheet
Bipolar (Bjt) Single Transistor, Npn, 125 V, 100 Mhz, 330 Mw, 800 Ma, 25 Rohs Compliant Infineon - 31Y0450 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 125 V, 100 Mhz, 330 Mw, 800 Ma, 25 Rohs Compliant Infineon
31Y0450
Bipolar (Bjt) Single Transistor, Npn, 125 V, 100 Mhz, 330 Mw, 800 Ma, 25 Rohs Compliant Infineon 31Y0450
Bipolar (BJT) Single Transistor, NPN, 125 V, 100 MHz, 330 mW, 800 mA, 25 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 125 V, 100 MHz, 330 mW, 800 mA, 25 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BCX41E6327HTSA1TR-ND 1022791-BCX41E6327HTSA1 276-BCX41E6327HTSA1 BCX41E6327HTSA1 BCX41E6327HTSA1 BCX41E6327HTSA1 31Y0450
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BCX41E6327HTSA1 125V 0.8A SOT23 Bipolar Transistor Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single Bipolar Transistors Bipolar (Bjt) Single Transistor, Npn, 125 V, 100 Mhz, 330 Mw, 800 Ma, 25 Rohs Compliant Infineon
Polarity NPN NPN; NPN NPN NPN; NPN NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; SOT23; PG-SOT23-3 Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 TO-3
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 800 milliamps 800 milliamps 800 milliamps
VCEO 125 volts 125 volts 125 volts
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