The BFR843EL3E6327XTSA1 is a low noise, dual band pre-matched RF bipolar transistor designed for high-speed and low power consumption applications. It features a maximum RF input power of 20 dBm and demonstrates robust performance with a high transition frequency, achieving a minimum noise figure of 1 dB at 2.4 GHz and 1.15 dB at 5.5 GHz under specified conditions. The transistor offers high gain, with Gms values of 24 dB at 2.4 GHz and 21.5 dB at 5.5 GHz, making it suitable for various wireless communication applications, including WLAN and broadband LTE or WiMAX. It is also qualified for industrial applications according to JEDEC standards, ensuring reliability in demanding environments. The device is packaged in a low-profile TSLP-3-10 format, with a total power dissipation rating of 125 mW and a junction temperature limit of 150 ¬8C. It is sensitive to electrostatic discharge, necessitating careful handling.
Manufacturer: Infineon Technologies
Win Source Part Number: 864191-BFR843EL3E632
Operating Temperature Range: 150°C (TJ)
Features: RF Transistor NPN 2.6V 55mA - 125mW Surface Mount
Package: Reel - TR
Package: 3-XFDFN
Mounting: Surface Mount
Family Name: BFR843
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited
Quantity per package: 15000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 11 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.33.0001
Other Part Number: BFR843EL3E6327XTSA1D
RF TRANS NPN 2.6V TSLP-3-10 Product overview: BFR843EL3E6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.6V. Search-friendly keywords include transistor, BJT, switching, amplification, 2.6V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR843EL3E6327XT
RF Transistor NPN 2.6V 55mA 125mW Surface Mount PG-TSLP-3-10
RF Transistor NPN 2.6V 55mA 125mW Surface Mount PG-TSLP-3-10
RF Transistor NPN 2.6V 55mA 125mW Surface Mount PG-TSLP-3-10
TRANSISTOR, RF, AEC-Q101, NPN, TSLP3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.6V; Transition Frequency ft:-; Power Dissipation Pd:125mW; DC Collector Current:55mA; DC Current Gain hFE:230hFE; RF Transistor RoHS Compliant: Yes
RF Bipolar Transistors RF BIP TRANSISTORS
RF TRANS NPN 2.6V TSLP-3-10
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 864191-BFR843EL3E6327XTSA1 | 283-BFR843EL3E6327XTSA1 | BFR843EL3E6327XTSA1CT-ND | 34AC1363 | BFR843EL3E6327XTSA1 | BFR843EL3E6327XTSA1 |
| Product Name | TRANSISTORS - RF Transistors (BJT) - BFR843EL3E6327XTSA1 | 2.6V Bipolar Transistor | Bipolar RF Transistors | Transistor, Rf, Aec-Q101, Npn, Tslp3; Transistor Polarity Infineon | RF Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN | NPN | ||
| Package Type | SOT3 | Tape & Reel (TR) | 3-XFDFN | TO-3 | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 55 milliamps | |||||
| VCEO | 2.6 volts | 2.6 volts |
