Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS 386L6 E6327 BFS 386L6 E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 1023259-BFS 386L6 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10dB to 14.5dB
Frequency - Transition: 14GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 1.8GHz to 3GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-TSLP-6
Maximum Current Collector: 35mA, 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 6V
Typical Gain (hFE) (Min): 60 @ 15mA, 3V / 60 @ 40mA, 3V
Maximum Power Dissipation: 210mW, 380mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

RF TRANS 2 NPN 6V 14GHZ TSLP-6-1 Product overview: BFS 386L6 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 6V, 14GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 6V, 14GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS 386L6 E6327 can be used for catalog matching and distributor lookup.