Infineon Technologies AG Low Noise RF Transistors BFP420F

Low Noise Silicon Bipolar RF Transistor Summary of Features Low noise high gain silicon bipolar RF transistor Based on Infineon´s reliable very high volume 25 GHz silicon bipolar technology 0.9 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA 16 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA Popular in discrete oscillators Thin, small, flat, Pb-free (RoHS compliant) and Hal-free (“green”) package with visible leads Potential Applications As Low Noise Amplifier (LNA) in Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) Multimedia applications such as mobile/portable TV, CATV, FM Radio ISM applications like RKE, AMR and Zigbee As discrete active mixer in RF Frontends As active device in discretes oscillators Applications Domestic robots Smart Home & Building Designers who used this product also designed with IRLML0100TRPBF-1 | N-Channel Power MOSFET IPD30N03S4L-14 | Automotive MOSFET TLE493D-W2B6 A0 | 3D magnetic sensors BSS84P | Small signal/small power MOSFET BCR400W | RF Mosfet and Active Bias Controllers TLV493D-A1B6 | 3D magnetic sensors IRLML0100TRPBF-1 | N-Channel Power MOSFET IPD30N03S4L-14 | Automotive MOSFET TLE493D-W2B6 A0 | 3D magnetic sensors BSS84P | Small signal/small power MOSFET BCR400W | RF Mosfet and Active Bias Controllers TLV493D-A1B6 | 3D magnetic sensors IRLML0100TRPBF-1 | N-Channel Power MOSFET IPD30N03S4L-14 | Automotive MOSFET 1 2