Infineon Technologies AG Bipolar RF Transistors BFP720H6327

Description
RF TRANSISTOR, X BAND, NPN
Description
RF TRANSISTOR, X BAND, NPN
Datasheet
Datasheet Summary
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The BFP720 is a low noise silicon germanium bipolar RF transistor designed for wideband low-noise amplifier applications in mobile and wireless systems. It is housed in a SOT343 package with visible leads and operates from 1.0V to 4.0V with a maximum collector current of 25 mA and total power dissipation of 100 mW. The device offers a transition frequency of 45 GHz, minimum noise figures of 0.7 dB at 5.5 GHz and 0.95 dB at 10 GHz, and maximum available gain of 15 dB at 10 GHz with 13 mA collector current. It meets AEC-Q101 qualification requirements and is RoHS compliant and halogen-free.

Datasheet Summary
Powered by GS/AI

The BFP720 is a low noise silicon germanium bipolar RF transistor designed for wideband low-noise amplifier applications in mobile and wireless systems. It is housed in a SOT343 package with visible leads and operates from 1.0V to 4.0V with a maximum collector current of 25 mA and total power dissipation of 100 mW. The device offers a transition frequency of 45 GHz, minimum noise figures of 0.7 dB at 5.5 GHz and 0.95 dB at 10 GHz, and maximum available gain of 15 dB at 10 GHz with 13 mA collector current. It meets AEC-Q101 qualification requirements and is RoHS compliant and halogen-free.

Suppliers

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Bipolar RF Transistors - BFP720H6327 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP720H6327
Bipolar RF Transistors BFP720H6327
RF TRANSISTOR, X BAND, NPN

RF TRANSISTOR, X BAND, NPN

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number BFP720H6327
Product Name Bipolar RF Transistors
Polarity NPN; NPN
Package Type SC-82A, SOT-343
IC(max) 25 milliamps
VCEO 4.7 volts
Power Gain 10.5 dB
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