Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR181T BFR181T

Manufacturer: Infineon Technologies
Win Source Part Number: 201165-BFR181T
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 19.5dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.45dB to 1.8dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SC-75
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 5mA, 8V
Maximum Power Dissipation: 175mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

TRANSISTOR RF NPN 12V SC-75 Product overview: BFR181T from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR181T can be used for catalog matching and distributor lookup.