BFQ19S is a silicon NPN RF transistor designed for low noise, low distortion broadband amplifiers in telecommunications systems up to 1.5 GHz, operating at collector currents from 10 mA to 70 mA. It is packaged in SOT89 and is RoHS compliant. The device has a maximum collector-emitter voltage of 15 V, a collector current rating of 120 mA, and a total power dissipation of 1 W at ambient temperatures up to 85 °C. It features a transition frequency of 5.5 GHz at 70 mA and 8 V, with a minimum noise figure of 1.8 dB at 900 MHz and 3 dB at 1.8 GHz. It meets AEC-Q101 qualification standards.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFQ19S |
| Product Name | High Linearity RF Transistors |
| Package Type | SOT89; SOT89 |
