Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFP650E6327HTSA1 BFP650E6327HTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 116044-BFP650E6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10.5dB to 21.5dB
Frequency - Transition: 37GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.8dB to 1.9dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V
Typical Gain (hFE) (Min): 110 @ 80mA, 3V
Maximum Power Dissipation: 500mW
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

RF Transistor NPN 4.5V 150mA 37GHz 500mW Surface Mount PG-SOT343-4

RF TRANS NPN 4.5V 37GHZ SOT343-4

RF TRANS NPN 4.5V 37GHZ SOT343-4 Product overview: BFP650E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.5V, 37GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 4.5V, 37GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP650E6327HTSA1 can be used for catalog matching and distributor lookup.