Infineon Technologies AG High Linearity RF Transistors BFP450

High Linearity Low Noise Si NPN RF Transistor Summary of Features Highly linear low noise driver amplifier for all RF frontends up to 2.5 GHz Output compression point OP1dB = 18.5 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system Output 3rd order intermodulation point OIP3 = 31 dBm at 90 mA, 3 V, 1.9 GHz, 50 Ω system Maximum available gain Gma = 15.5 dB at 50 mA, 3 V, 1.9 GHz Minimum noise figure NFmin = 1.7 dB at 50 mA, 3 V, 1.9 GHz Based on Infineon´s reliable, high volume 25 GHz SIEGET™ line Easy to use Pb-free (RoHS compliant) standard package with visible leads Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN and Bluetooth Output stage LNA for active antennas TV, GPS, SDARS, 2.4 GHz WLAN, etc. Suitable for 3 - 5.5 GHz oscillators NPN Silicon RF Transistor Summary of Features For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.