Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFP183WE6327BTSA1 BFP183WE6327BTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1023238-BFP183WE6327 BTSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 22dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1023238-BFP183WE6327 BTSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 22dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - RF Transistors (BJT) - BFP183WE6327BTSA1 - 1023238-BFP183WE6327BTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFP183WE6327BTSA1
1023238-BFP183WE6327BTSA1
TRANSISTORS - RF Transistors (BJT) - BFP183WE6327BTSA1 1023238-BFP183WE6327BTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1023238-BFP183WE6327 BTSA1 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 22dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT343-4 Maximum Current Collector: 65mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 15mA, 8V Maximum Power Dissipation: 450mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1023238-BFP183WE6327BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 22dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.9dB to 1.4dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 65mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 15mA, 8V
Maximum Power Dissipation: 450mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar RF Transistors - BFP183WE6327BTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
BFP183WE6327BTSA1TR-ND
Bipolar RF Transistors BFP183WE6327BTSA1TR-ND
RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount PG-SOT343-4

RF Transistor NPN 12V 65mA 8GHz 450mW Surface Mount PG-SOT343-4

Buy Now Datasheet
Singapore, Singapore
12V 8GHZ Bipolar Transistor
283-BFP183WE6327BTSA1
12V 8GHZ Bipolar Transistor 283-BFP183WE6327BTSA1
RF TRANS NPN 12V 8GHZ SOT343-4 Product overview: BFP183WE6327BTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP183WE6327BTSA 1 can be used for catalog matching and distributor lookup.

RF TRANS NPN 12V 8GHZ SOT343-4 Product overview: BFP183WE6327BTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP183WE6327BTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar RF Transistors - BFP183WE6327BTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP183WE6327BTSA1
Bipolar RF Transistors BFP183WE6327BTSA1
RF TRANS NPN 12V 8GHZ SOT343-4

RF TRANS NPN 12V 8GHZ SOT343-4

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BFP183WE6327BTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFP183WE6327BTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP183WE6327BTSA1
RF TRANS NPN 12V 8GHZ SOT343-4

RF TRANS NPN 12V 8GHZ SOT343-4

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1023238-BFP183WE6327BTSA1 BFP183WE6327BTSA1TR-ND 283-BFP183WE6327BTSA1 BFP183WE6327BTSA1 BFP183WE6327BTSA1
Product Name TRANSISTORS - RF Transistors (BJT) - BFP183WE6327BTSA1 Bipolar RF Transistors 12V 8GHZ Bipolar Transistor Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; NPN NPN NPN; NPN
Package Type SOT3; PG-SOT343-4 SC-82A, SOT-343 Tape & Reel (TR) SC-82A, SOT-343
Packing Method Tape Reel; Reel - TR Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
TJ 150 C (302 F) 150 C (302 F) 150 C (302 F)
Power Gain 70 dB 22 dB
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