BFP193W is a silicon NPN RF transistor designed for low-noise, high-gain amplifiers up to 2 GHz and linear broadband applications. It is packaged in an SOT343 case with a maximum collector-emitter voltage of 12 V, collector current of 80 mA, and total power dissipation of 580 mW at T_S ≤ 66°C. The transistor has a transition frequency of 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and is RoHS compliant. It meets AEC-Q101 qualification standards. The junction temperature rating is 150 °C, and the thermal resistance from junction to soldering point is 145 K/W.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFP193W |
| Product Name | High Linearity RF Transistors |
| Package Type | SOT343 |
