Infineon Technologies AG 12V Bipolar Transistor BFR93AW E6327

Description
TRANSISTOR NPN RF 12V SOT-323 Product overview: BFR93AW E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR93AW E6327 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR NPN RF 12V SOT-323 Product overview: BFR93AW E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR93AW E6327 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
12V Bipolar Transistor
283-BFR93AW E6327
12V Bipolar Transistor 283-BFR93AW E6327
TRANSISTOR NPN RF 12V SOT-323 Product overview: BFR93AW E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR93AW E6327 can be used for catalog matching and distributor lookup.

TRANSISTOR NPN RF 12V SOT-323 Product overview: BFR93AW E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR93AW E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFR93AW E6327 - 201175-BFR93AW E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFR93AW E6327
201175-BFR93AW E6327
TRANSISTORS - RF Transistors (BJT) - BFR93AW E6327 201175-BFR93AW E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201175-BFR93AW E6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 10.5dB to 15.5dB Frequency - Transition: 6GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT323-3 Maximum Current Collector: 90mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 70 @ 30mA, 8V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 201175-BFR93AW E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10.5dB to 15.5dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 90mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFR93AW E6327 201175-BFR93AW E6327
Product Name 12V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFR93AW E6327
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; SOT323; PG-SOT323-3
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 1.5 dB 1.5 dB
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