Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR93AW E6327 BFR93AW E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201175-BFR93AW E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10.5dB to 15.5dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 90mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited

TRANSISTOR NPN RF 12V SOT-323 Product overview: BFR93AW E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR93AW E6327 can be used for catalog matching and distributor lookup.