Infineon Technologies AG Datasheets for RF Transistors
RF transistors are designed to handle high-power radio frequency (RF) signals in devices such as stereo amplifiers, radio transmitters, and television monitors.
RF Transistors: Learn more
| Product Name | Notes |
|---|---|
| 1200 V IGBT with anti-parallel diode in TO-247 package High speed 1200 V, 25 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the best compromise... | |
| 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all... | |
| 600 V, 15 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to... | |
| 600 V, 15 A IGBT with anti-parallel diode in TO-220 Full-Pak package Hard-switching 600 V, 15 A TRENCHSTOP™ IGBT3 Discrete copacked with full-rated external free-wheeling diode in a TO-220 Full-Pak... | |
| 600 V, 6 A IGBT discrete with anti-parallel diode in TO220 package Hard-switching 600 V, 6 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to... | |
| CoolMOS™ CP, Infineon's fifth series of CoolMOS™, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. Summary... | |
| Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over... | |
| Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering... | |
| Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need... | |
| RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless... | |
| Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2... | |
| The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles,... | |
| The RC-Drives 600 V, 4 A hard-switching IGBT3 with monolithically integrated reverse conducting diode in a TO252 package, has been developed by Infineon as a cost optimized solution for consumer... |
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