Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFR949T E6327 BFR949T E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201178-BFR949T E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 20dB
Frequency - Transition: 9GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 2.5dB @ 1GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SC-75
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 100 @ 5mA, 6V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

TRANSISTOR RF BIP SC-75 Product overview: BFR949T E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR949T E6327 can be used for catalog matching and distributor lookup.