RF TRANS NPN 12V 8GHZ SOT343-4
RF TRANS NPN 12V 8GHZ SOT343-4 Product overview: BFP193WH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP193WH6327XTSA
Infineon RF Bip Transisitor BFP 193W H63
Infineon RF Bip Transisitor BFP 193W H63
Infineon RF Bip Transisitor BFP 193W H63
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT343-4
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT343-4
RF Transistor NPN 12V 80mA 8GHz 580mW Surface Mount PG-SOT343-4
Manufacturer: Infineon Technologies
Win Source Part Number: 099196-BFP193WH6327X
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 13.5dB to 20.5dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB to 1.6dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 580mW
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 580 mW, 80 mA, 70 RoHS Compliant: Yes
RF TRANS NPN 12V 8GHZ SOT343-4
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BFP193WH6327XTSA1 | 283-BFP193WH6327XTSA1 | 2591415 | BFP193WH6327XTSA1DKR-ND | 099196-BFP193WH6327XTSA1 | 50Y1748 | BFP193WH6327XTSA1 |
| Product Name | Bipolar RF Transistors | 12V 8GHZ Bipolar Transistor | Bipolar Transistors | Bipolar RF Transistors | TRANSISTORS - RF Transistors (BJT) - BFP193WH6327XTSA1 | Bipolar Rf Transistor, Npn, 12 V, 8 Ghz, 580 Mw, 80 Ma, 70 Rohs Compliant Infineon | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; NPN | NPN | NPN; NPN | NPN | |||
| Package Type | SC-82A, SOT-343 | Tape & Reel (TR) | SOT-343 | SC-82A, SOT-343 | SOT3; PG-SOT343-4 | TO-3 | |
| IC(max) | 80 milliamps | 80 milliamps | |||||
| VCEO | 12 volts | 12 volts | 12 volts | ||||
| Power Gain | 13.5 dB | 20.5 dB |
