RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4
RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4
RF Transistor NPN 4.5V 50mA 40GHz 200mW Surface Mount PG-SOT343-4
Manufacturer: Infineon Technologies
Win Source Part Number: 115232-BFP640H6327XT
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.5dB
Frequency - Transition: 40GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.65dB to 1.2dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 4.5V
Typical Gain (hFE) (Min): 110 @ 30mA, 3V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
RF TRANS NPN 4.5V 40GHZ SOT343-4 Product overview: BFP640H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.5V, 40GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 4.5V, 40GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP640H6327XTSA1
RF TRANS NPN 4.5V 40GHZ SOT343-4
Infineon RF Bip Transisitor BFP 640ESD H
Infineon RF Bip Transisitor BFP 640ESD H
Infineon RF Bip Transisitor BFP 640ESD H
RF TRANS, NPN, 4.7V, 0.05A, 0.2W, SOT343; Transistor Polarity:NPN; Collector Emitter Voltage Max:4.7V; Transition Frequency:42GHz; Power Dissipation:200mW; Continuous Collector Current:50mA; No. of Pins:4Pins; Product Range:-; MSL:- RoHS Compliant: Yes
RF TRANS NPN 4.5V 40GHZ SOT343-4
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | RS Components, Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | BFP640H6327XTSA1CT-ND | 115232-BFP640H6327XTSA1 | 283-BFP640H6327XTSA1 | BFP640H6327XTSA1 | 2591442 | 85X4134 | BFP640H6327XTSA1 |
| Product Name | Bipolar RF Transistors | TRANSISTORS - RF Transistors (BJT) - BFP640H6327XTSA1 | 4.5V 40GHZ Bipolar Transistor | Bipolar RF Transistors | Bipolar Transistors | Rf Trans, Npn, 4.7V, 0.05A, 0.2W, Sot343; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN; NPN | NPN; NPN | NPN | |||
| Package Type | SC-82A, SOT-343 | SOT3; PG-SOT343-4 | Tape & Reel (TR) | SC-82A, SOT-343 | SOT-343 | TO-3 | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 50 milliamps | 50 milliamps | |||||
| VCEO | 4.5 volts | 4.5 volts | 4.5 volts |
