Infineon Technologies AG Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP520FH6327

Description
LOW-NOISE SI TRANSISTOR
  • Bipolar RF Transistors - BFP520FH6327 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Datasheet
Description
LOW-NOISE SI TRANSISTOR
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BFP520FH6327
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BFP520FH6327
LOW-NOISE SI TRANSISTOR

LOW-NOISE SI TRANSISTOR

Supplier's Site
Bipolar RF Transistors - BFP520FH6327 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
BFP520FH6327
Bipolar RF Transistors BFP520FH6327
LOW-NOISE SI TRANSISTOR

LOW-NOISE SI TRANSISTOR

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number BFP520FH6327 BFP520FH6327
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar RF Transistors
Packing Method Bulk; Bulk
VCEO 2.5 volts 2.5 volts
Output Power 0.1200 watts 0.1200 watts
Polarity NPN; NPN
Package Type 4-SMD, Flat Leads
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