The BFP650F is a silicon germanium NPN RF bipolar transistor designed for low-noise, high-linearity amplifier applications in SDARS, ISM band, and CATV systems. It is packaged in a TSFP-4-1 case with a pinout of 1=B, 2=E, 3=C, 4=E and supports a maximum collector current of 150 mA. With a transition frequency of 42 GHz, a minimum noise figure of 0.8 dB at 1.8 GHz and 3 V, and an output third-order intercept point of 31 dBm at 1.8 GHz and 80 mA, it is suited for high-performance RF stages. It meets AEC-Q101 and JEDEC JESD47, JESD22, and J-STD-020 industrial qualification standards. The device is ESD-sensitive and operates within a junction temperature range up to 150 °C.
NPN Silicon Germanium RF Transistor
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFP650F |
| Product Name | High Linearity RF Transistors |
| Package Type | TSFP-4-1 |
