Infineon Technologies AG High Linearity RF Transistors BFP650F

Description
NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 70 GHz fT- Silicon Germanium technology Pb-free (RoHS compliant) package Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX Output stage LNA for active antennas TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc. Suitable for 5 - 10.5 GHz oscillators
  • High Linearity RF Transistors - BFP650F - Infineon Technologies AG
    Infineon Technologies AG
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Description
NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 70 GHz fT- Silicon Germanium technology Pb-free (RoHS compliant) package Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX Output stage LNA for active antennas TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc. Suitable for 5 - 10.5 GHz oscillators
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Suppliers

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High Linearity RF Transistors - BFP650F - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP650F
High Linearity RF Transistors BFP650F
NPN Silicon Germanium RF Transistor Summary of Features For medium power amplifiers and driver stages High OIP3 and P-1dB Ideal for low phase noise oscilators Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz 70 GHz fT- Silicon Germanium technology Pb-free (RoHS compliant) package Potential Applications Driver amplifier ISM bands 434 and 868 MHz 1.9 GHz cordless phones CATV LNA Transmitter driver amplifier 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX Output stage LNA for active antennas TV, GPS, SDARS 2.4 / 5 GHz WLAN 2.4 / 3.5 / 5 GHz WiMAX, etc. Suitable for 5 - 10.5 GHz oscillators

NPN Silicon Germanium RF Transistor


Summary of Features

  • For medium power amplifiers and driver stages
  • High OIP3 and P-1dB
  • Ideal for low phase noise oscilators
  • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
  • Noise figure F = 0.8 dB at 1.8 GHz
  • 70 GHz fT- Silicon Germanium technology
  • Pb-free (RoHS compliant) package

Potential Applications

  • Driver amplifier
  • ISM bands 434 and 868 MHz
  • 1.9 GHz cordless phones
  • CATV LNA
  • Transmitter driver amplifier
  • 2.4 GHz WLAN / Bluetooth, 2.4 / 3.5 GHz WiMAX
  • Output stage LNA for active antennas
  • TV, GPS, SDARS
  • 2.4 / 5 GHz WLAN
  • 2.4 / 3.5 / 5 GHz WiMAX, etc.
  • Suitable for 5 - 10.5 GHz oscillators
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP650F
Product Name High Linearity RF Transistors
Package Type TSFP-4-1
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