Infineon Technologies AG RF FETs, MOSFETs BF2040E6814

The BF2040 series comprises silicon N-channel MOSFET tetrodes designed for low-noise, high-gain input stages up to 1 GHz, operating at 5 V. Available in SOT143, SOT143R, and SOT343 packages, each has four pins with pin configurations specified per variant. The devices are RoHS compliant and qualified to AEC-Q101. Maximum drain-source voltage is 8 V, continuous drain current is 40 mA, and total power dissipation is 200 mW at specified case temperatures. Forward transconductance is 37 to 42 mS, gate input capacitance is 2.9 to 3.4 pF, power gain at 800 MHz is 20 to 23 dB, and noise figure is 1.6 to 2.2 dB. The series supports a gain control range of 45 to 50 dB. Storage temperature ranges from -55 °C to 150 °C.