Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF799W E6327 BF799W E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201056-BF799W E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 800MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Typical Gain (hFE) (Min): 40 @ 20mA, 10V
Maximum Power Dissipation: 280mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

TRANSISTOR NPN RF 20V SOT-323 Product overview: BF799W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF799W E6327 can be used for catalog matching and distributor lookup.