Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BF799W E6327 BF799W E6327

Description
Manufacturer: Infineon Technologies Win Source Part Number: 201056-BF799W E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 800MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 3dB @ 100MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT323-3 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 201056-BF799W E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 800MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 3dB @ 100MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT323-3 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - RF Transistors (BJT) - BF799W E6327 - 201056-BF799W E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BF799W E6327
201056-BF799W E6327
TRANSISTORS - RF Transistors (BJT) - BF799W E6327 201056-BF799W E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201056-BF799W E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 800MHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 3dB @ 100MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT323-3 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Typical Gain (hFE) (Min): 40 @ 20mA, 10V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201056-BF799W E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 800MHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 3dB @ 100MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Typical Gain (hFE) (Min): 40 @ 20mA, 10V
Maximum Power Dissipation: 280mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
20V Bipolar Transistor
283-BF799W E6327
20V Bipolar Transistor 283-BF799W E6327
TRANSISTOR NPN RF 20V SOT-323 Product overview: BF799W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF799W E6327 can be used for catalog matching and distributor lookup.

TRANSISTOR NPN RF 20V SOT-323 Product overview: BF799W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF799W E6327 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors
Product Number 201056-BF799W E6327 283-BF799W E6327
Product Name TRANSISTORS - RF Transistors (BJT) - BF799W E6327 20V Bipolar Transistor
Polarity NPN; NPN NPN
Package Type SOT3; SOT323; PG-SOT323-3 Reel - TR
Packing Method Tape Reel; Reel - TR Reel - TR
TJ 150 C (302 F) 150 C (302 F)
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