Infineon Technologies AG HiRel Silicon Bipolar Transistor BFY182 (ES)

Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/04 B Applications Space applications
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Description
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/04 B Applications Space applications
Request a Quote
Datasheet
Datasheet Summary
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BFY182(ES) is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. It is housed in a Micro-X1 package and operates over a junction temperature range of -65°C to 200°C. The device has a collector-emitter voltage rating of 12 V, a collector current limit of 35 mA, and a total power dissipation of 250 mW at 136°C. It achieves a transition frequency of 8 GHz and a noise figure of 2.4 dB at 2 GHz with a collector current of 5 mA and collector-emitter voltage of 5 V. The part meets ESCC Detail Specification No. 5611/006 and is qualified for space applications.

Datasheet Summary
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BFY182(ES) is a hermetically sealed, space-qualified NPN silicon RF transistor designed for low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. It is housed in a Micro-X1 package and operates over a junction temperature range of -65°C to 200°C. The device has a collector-emitter voltage rating of 12 V, a collector current limit of 35 mA, and a total power dissipation of 250 mW at 136°C. It achieves a transition frequency of 8 GHz and a noise figure of 2.4 dB at 2 GHz with a collector current of 5 mA and collector-emitter voltage of 5 V. The part meets ESCC Detail Specification No. 5611/006 and is qualified for space applications.

Suppliers

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HiRel Silicon Bipolar Transistor - BFY182 (ES) - Infineon Technologies AG
Neubiberg, Germany
HiRel Silicon Bipolar Transistor
BFY182 (ES)
HiRel Silicon Bipolar Transistor BFY182 (ES)
HiRel Microwave Transistor Summary of Features HiRel Discrete and Microwave Semiconductor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. Hermetically sealed microwave package fT= 8 GHz F = 2.4 dB at 2 GHz Type Variant No. 04 ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/04 B Applications Space applications

HiRel Microwave Transistor


Summary of Features

  • HiRel Discrete and Microwave Semiconductor
  • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA.
  • Hermetically sealed microwave package
  • fT= 8 GHz
  • F = 2.4 dB at 2 GHz
  • Type Variant No. 04

ESA Space Qualified ESA/SCC Detail Spec. No.: 5611/006/04 B


Applications

  • Space applications
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Bipolar RF Transistors
Product Number BFY182 (ES)
Product Name HiRel Silicon Bipolar Transistor
Package Type Micro-X
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