Infineon Technologies AG High Linearity RF Transistors BFP196

Description
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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Description
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
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Datasheet
Datasheet Summary
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BFP196 is a low noise silicon bipolar RF transistor for broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz, operating at collector currents between 20 mA and 80 mA, and used as a power amplifier in DECT and PCN systems. It is packaged in an SOT143 case with a collector-emitter voltage rating of 12 V and a maximum collector current of 150 mA. The device has a transition frequency of 7.5 GHz, a minimum noise figure of 1.3 dB at 900 MHz, and a total power dissipation of 700 mW. The package is Pb-free and RoHS compliant, and a qualification report according to AEC-Q101 is available.

Datasheet Summary
Powered by GS/AI

BFP196 is a low noise silicon bipolar RF transistor for broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz, operating at collector currents between 20 mA and 80 mA, and used as a power amplifier in DECT and PCN systems. It is packaged in an SOT143 case with a collector-emitter voltage rating of 12 V and a maximum collector current of 150 mA. The device has a transition frequency of 7.5 GHz, a minimum noise figure of 1.3 dB at 900 MHz, and a total power dissipation of 700 mW. The package is Pb-free and RoHS compliant, and a qualification report according to AEC-Q101 is available.

Suppliers

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High Linearity RF Transistors - BFP196 - Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP196
High Linearity RF Transistors BFP196
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

NPN Silicon RF Transistor


Summary of Features

  • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
  • Power amplifier for DECT and PCN systems
  • fT = 7.5 GHz, F = 1.3 dB at 900 MHz
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP196
Product Name High Linearity RF Transistors
Package Type SOT143; SOT143
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