Infineon Technologies AG RF - RF Transistor - Low Noise RF Transistors - BFP843F BFP843F

The BFP843F is a robust low noise broadband pre-matched hetero-junction bipolar transistor (HBT). Summary of Features Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness High transition frequency fT = 60 GHz to enable best in class noise figure: NFmin = 1.1 dB at 5.5 GHz, 1.8 V, 8 mA High gain Gms = 18 dB at 5.5 GHz, 1.8 V, 15 mA OIP3 = 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA Ideal for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V requires corresponding collector resistor) Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor) Potential Applications Wireless communications: WLAN, WiMAX and Bluetooth Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo) Applications Wired Communication Designers who used this product also designed with BGA5M1BN6 | Multi-purpose LNAs DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BGA5M1BN6 | Multi-purpose LNAs DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection BGA5M1BN6 | Multi-purpose LNAs DPS368 | Pressure sensors for IoT ESD106-B1-W0201 | Low capacitance diodes for ESD protection