BFP193 is a silicon NPN RF transistor designed for low-noise, high-gain amplifiers up to 2 GHz and linear broadband applications. It is housed in an SOT143 package, with a maximum collector-emitter voltage of 12 V, collector current of 80 mA, and total power dissipation of 580 mW at 25 °C. The device has a transition frequency of 8 GHz, a minimum noise figure of 1 dB at 900 MHz, and is RoHS compliant. AEC-Q101 qualification is available. The junction temperature range is -55 to 150 °C, with a thermal resistance from junction to solder point of 135 K/W.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFP193 |
| Product Name | High Linearity RF Transistors |
| Package Type | SOT143; SOT143-4-1 |
