Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS481 E6327 BFS481 E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 039640-BFS481 E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 20dB
Frequency - Transition: 8GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 0.9dB to 1.2dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT363-6
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 5mA, 8V
Maximum Power Dissipation: 175mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

TRANSISTOR RF NPN 12V SOT-363 Product overview: BFS481 E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS481 E6327 can be used for catalog matching and distributor lookup.