NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
Summary of Features
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz, F = 0.9 dB at 900 MHz
Two (galvanic) internal isolated Transistors in one package
For orientation in reel see package information in Datasheet
Pb-free (RoHS compliant) package
Potential Applications
Wireless Communications
For amplifier and oscillator applications in RF Front-end
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
Summary of Features
- For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
- fT = 8 GHz, F = 0.9 dB at 900 MHz
- Two (galvanic) internal isolated Transistors in one package
- For orientation in reel see package information in Datasheet
- Pb-free (RoHS compliant) package
Potential Applications
- Wireless Communications
- For amplifier and oscillator applications in RF Front-end
