BFS481 is a low-noise silicon bipolar RF transistor with two galvanically isolated transistors in a single SOT363 package, designed for broadband amplifiers at collector currents from 0.5 mA to 12 mA. It has a transition frequency of 8 GHz and a minimum noise figure of 0.9 dB at 900 MHz with a collector current of 2 mA and a collector-emitter voltage of 8 V. The device supports a maximum collector-emitter voltage of 12 V, a collector current of 20 mA, and a total power dissipation of 175 mW at 25 °C. It is RoHS compliant and halogen-free, and meets AEC-Q101 qualification standards.
NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFS481 |
| Product Name | Low Noise RF Transistors |
| Package Type | SOT363 |
