RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP
RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP
RF Transistor NPN 2.8V 80mA 65GHz 185mW Surface Mount 4-TSFP
Infineon Bipolar RF Transistor
Infineon Bipolar RF Transistor
Infineon Bipolar RF Transistor
Manufacturer: Infineon Technologies
Win Source Part Number: 125665-BFP620FH7764X
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 21dB to 10dB
Frequency - Transition: 65GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 0.7dB to 1.3dB @ 1.8GHz to 6GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 4-TSFP
Maximum Current Collector: 80mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 2.8V
Typical Gain (hFE) (Min): 110 @ 50mA, 1.5V
Maximum Power Dissipation: 185mW
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs
RF TRANS NPN 2.8V 65GHZ 4TSFP Product overview: BFP620FH7764XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.8V, 65GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 2.8V, 65GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP620FH7764XTSA
RF TRANS NPN 2.8V 65GHZ 4TSFP
RF TRANSISTOR, NPN, 2.3V, 65GHZ, TSFP; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:2.3V; Transition Frequency ft:65GHz; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:110hFE; RF Transistor RoHS Compliant: Yes
RF TRANS NPN 2.8V 65GHZ 4TSFP
| DigiKey | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | BFP620FH7764XTSA1DKR-ND | 2613946 | 125665-BFP620FH7764XTSA1 | 283-BFP620FH7764XTSA1 | BFP620FH7764XTSA1 | 13AC8239 | BFP620FH7764XTSA1 |
| Product Name | Bipolar RF Transistors | Bipolar Transistors | TRANSISTORS - RF Transistors (BJT) - BFP620FH7764XTSA1 | 2.8V 65GHZ Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Rf Transistor, Npn, 2.3V, 65Ghz, Tsfp; Transistor Polarity Infineon | Bipolar RF Transistors |
| Polarity | NPN | NPN; NPN | NPN | NPN; NPN | |||
| Package Type | 4-SMD, Flat Leads | TSFP-4-1 | SOT3; 4-TSFP | Tape & Reel (TR) | TO-3 | 4-SMD, Flat Leads | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 80 milliamps | 80 milliamps | |||||
| VCEO | 2.8 volts | 2.8 volts | 2.8 volts |
