Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
TRANS PREBIAS PNP 50V SOT23 Product overview: BCR555E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR555E6327HTSA1
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Manufacturer: Infineon Technologies
Win Source Part Number: 119395-BCR555E6327HT
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT23-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
BRT TRANS, 2.2K/10KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-500mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:0.22(Ratio); RF Transistor RoHS Compliant: Yes
TRANS PREBIAS PNP 50V SOT23-3
Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
TRANS PREBIAS PNP 50V SOT23
| DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Win Source Electronics | Newark, An Avnet Company | ODG (Origin Data Global) | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BCR555E6327HTSA1CT-ND | 292-BCR555E6327HTSA1 | BCR555E6327HTSA1 | 119395-BCR555E6327HTSA1 | 03AJ0032 | BCR555E6327HTSA1 | 376-BCR555E6327HTSA1 | BCR555E6327HTSA1 | BCR555E6327HTSA1 |
| Product Name | Single, Pre-Biased Bipolar Transistors | 50V SOT23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555E6327HTSA1 | Brt Trans, 2.2K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Infineon | Single, Pre-Biased Bipolar Transistors | Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R | Bipolar Transistors - Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | PNP | PNP | PNP; PNP - Pre-Biased | PNP - Pre-Biased; PNP | PNP; PNP | ||||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | PG-SOT23-3 | SOT3; PG-SOT23-3 | TO-3; SOT23 | SOT23; TO-236-3, SC-59, SOT-23-3 | |||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 500000 milliamps | 500 milliamps | 500 milliamps | 500 milliamps | |||||
| VCEO | 50 volts | 50 volts | 50 volts | 50 volts |
