Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Manufacturer: Infineon Technologies
Win Source Part Number: 119395-BCR555E6327HT
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT23-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 330mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
TRANS PREBIAS PNP 50V SOT23 Product overview: BCR555E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR555E6327HTSA1
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 150MHz 330mW Surface Mount PG-SOT23
TRANS PREBIAS PNP 50V SOT23-3
BRT TRANS, 2.2K/10KOHM, SOT-23; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-500mA; Base Input Resistor R1:2.2kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:0.22(Ratio); RF Transistor RoHS Compliant: Yes
TRANS PREBIAS PNP 50V SOT23
Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BCR555E6327HTSA1 | 119395-BCR555E6327HTSA1 | 292-BCR555E6327HTSA1 | BCR555E6327HTSA1CT-ND | BCR555E6327HTSA1 | 03AJ0032 | BCR555E6327HTSA1 | 376-BCR555E6327HTSA1 | BCR555E6327HTSA1 |
| Product Name | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR555E6327HTSA1 | 50V SOT23 Bipolar Transistor | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | Brt Trans, 2.2K/10Kohm, Sot-23; Collector Emitter Voltage V(Br)Ceo Infineon | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Trans Digital BJT PNP 50V 500mA 3-Pin SOT-23 T/R | Bipolar Transistors - Pre-Biased | |
| Polarity | PNP | PNP; PNP - Pre-Biased | PNP | PNP - Pre-Biased; PNP | PNP; PNP | ||||
| Package Type | PG-SOT23-3 | SOT3; PG-SOT23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | |||
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | Tape Reel; Tape & Reel (TR) | |||||
| IC(max) | 500000 milliamps | 500 milliamps | 500 milliamps | 500 milliamps | |||||
| VCEO | 50 volts | 50 volts | 50 volts | 50 volts |
