The BFP196W is a silicon NPN RF transistor designed for low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz, with collector currents from 20 mA to 80 mA, and as a power amplifier for DECT and PCN systems. It is packaged in SOT343 with a junction temperature rating of 150 °C and a maximum total power dissipation of 700 mW. The transistor has a transition frequency of 7.5 GHz, a minimum noise figure of 1.3 dB at 900 MHz, and meets AEC-Q101 qualification standards. It is RoHS compliant and halogen-free.
NPN Silicon RF Transistor
Summary of Features
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Transistors |
| Product Number | BFP196W |
| Product Name | High Linearity RF Transistors |
| Package Type | SOT343 |
