Infineon Technologies AG High Linearity RF Transistors BFP196W

Description
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Request a Quote Datasheet
Description
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
High Linearity RF Transistors - BFP196W - Infineon Technologies AG
Neubiberg, Germany
High Linearity RF Transistors
BFP196W
High Linearity RF Transistors BFP196W
NPN Silicon RF Transistor Summary of Features For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA Power amplifier for DECT and PCN systems fT = 7.5 GHz, F = 1.3 dB at 900 MHz Pb-free (RoHS compliant) package Potential Applications Wireless Communications LNA in RF Front-end For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

NPN Silicon RF Transistor


Summary of Features

  • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA
  • Power amplifier for DECT and PCN systems
  • fT = 7.5 GHz, F = 1.3 dB at 900 MHz
  • Pb-free (RoHS compliant) package

Potential Applications

  • Wireless Communications
  • LNA in RF Front-end
  • For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Transistors
Product Number BFP196W
Product Name High Linearity RF Transistors
Package Type SOT343
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS6535 - 1020779-AUIRFS6535 - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 300 volts
PD 210000 milliwatts
View Details
6 suppliers
Single FETs, MOSFETs - 448-AUIRFZ24NSTRLTR-ND - DigiKey
Specs
Polarity N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63
Transistor Grade / Operating Range Automotive
View Details
8 suppliers
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS4010 - 1149863-AUIRFS4010 - Win Source Electronics
Specs
Package Type SOT3
View Details
5 suppliers