RF TRANSISTOR, NPN Product overview: BF771E6765N from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BF771E6765N can be used for catalog matching and distributor lookup.
RF Small Signal Bipolar Transistor, 0.08A, NPN
RF TRANSISTOR, NPN
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 283-BF771E6765N | BF771E6765N | BF771E6765N | BF771E6765N |
| Product Name | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar RF Transistors | |
| Package Type | Bulk | SOT23; SOT-23-3 | Automotive | SOT23; TO-236-3, SC-59, SOT-23-3 |
| Packing Method | Bulk | Bulk; Bulk | ||
| VCEO | 12 volts | 12 volts | 12 volts | |
| Noise Figure | 1 dB | 1 to ? dB | ||
| TJ | 150 C (302 F) | 150 C (302 F) |
