Infineon Technologies AG 12V Bipolar Transistor BFR182TE6327

Description
TRANSISTOR RF NPN 12V SC-75 Product overview: BFR182TE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR182TE6327 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
TRANSISTOR RF NPN 12V SC-75 Product overview: BFR182TE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR182TE6327 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
12V Bipolar Transistor
283-BFR182TE6327
12V Bipolar Transistor 283-BFR182TE6327
TRANSISTOR RF NPN 12V SC-75 Product overview: BFR182TE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR182TE6327 can be used for catalog matching and distributor lookup.

TRANSISTOR RF NPN 12V SC-75 Product overview: BFR182TE6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFR182TE6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFR182TE6327 - 201166-BFR182TE6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFR182TE6327
201166-BFR182TE6327
TRANSISTORS - RF Transistors (BJT) - BFR182TE6327 201166-BFR182TE6327
Manufacturer: Infineon Technologies Win Source Part Number: 201166-BFR182TE6327 Packaging: Reel - TR Mounting: SMD (SMT) Gain: 20dB Frequency - Transition: 8GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 1.2dB to 1.9dB @ 900MHz to 1.8GHz Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SC-75 Maximum Current Collector: 35mA VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Typical Gain (hFE) (Min): 50 @ 10mA, 8V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201166-BFR182TE6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 20dB
Frequency - Transition: 8GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.2dB to 1.9dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SC-75
Maximum Current Collector: 35mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 50 @ 10mA, 8V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFR182TE6327 201166-BFR182TE6327
Product Name 12V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFR182TE6327
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; PG-SC-75
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 1.2 dB 1.2 dB
Unlock Full Specs
to access all available technical data