Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFS17W E6327 BFS17W E6327

Manufacturer: Infineon Technologies
Win Source Part Number: 201180-BFS17W E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 1.4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 3.5dB to 5dB @ 800MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 25mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 40 @ 2mA, 1V
Maximum Power Dissipation: 280mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

TRANSISTOR NPN RF 15V SOT-323 Product overview: BFS17W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS17W E6327 can be used for catalog matching and distributor lookup.