Infineon Technologies AG 15V Bipolar Transistor BFS17W E6327

Description
TRANSISTOR NPN RF 15V SOT-323 Product overview: BFS17W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS17W E6327 can be used for catalog matching and distributor lookup.
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Description
TRANSISTOR NPN RF 15V SOT-323 Product overview: BFS17W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS17W E6327 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
15V Bipolar Transistor
283-BFS17W E6327
15V Bipolar Transistor 283-BFS17W E6327
TRANSISTOR NPN RF 15V SOT-323 Product overview: BFS17W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS17W E6327 can be used for catalog matching and distributor lookup.

TRANSISTOR NPN RF 15V SOT-323 Product overview: BFS17W E6327 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 15V. Search-friendly keywords include transistor, BJT, switching, amplification, 15V, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS17W E6327 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - BFS17W E6327 - 201180-BFS17W E6327 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - BFS17W E6327
201180-BFS17W E6327
TRANSISTORS - RF Transistors (BJT) - BFS17W E6327 201180-BFS17W E6327
Manufacturer: Infineon Technologies Win Source Part Number: 201180-BFS17W E6327 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 1.4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 3.5dB to 5dB @ 800MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT323-3 Maximum Current Collector: 25mA VCEO Maximum Collector-Emitter Breakdown Voltage: 15V Typical Gain (hFE) (Min): 40 @ 2mA, 1V Maximum Power Dissipation: 280mW Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201180-BFS17W E6327
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 1.4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 3.5dB to 5dB @ 800MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 25mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 15V
Typical Gain (hFE) (Min): 40 @ 2mA, 1V
Maximum Power Dissipation: 280mW
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors RF Transistors
Product Number 283-BFS17W E6327 201180-BFS17W E6327
Product Name 15V Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - BFS17W E6327
Polarity NPN NPN; NPN
Package Type Reel - TR SOT3; SOT323; PG-SOT323-3
Packing Method Reel - TR Tape Reel; Reel - TR
Noise Figure 3.5 dB 3.5 dB
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