Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Arrays - BCV62AE6327HTSA1 BCV62AE6327HTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1022757-BCV62AE6327H TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT143-4 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 1022757-BCV62AE6327H TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT143-4 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - BCV62AE6327HTSA1 - 1022757-BCV62AE6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays - BCV62AE6327HTSA1
1022757-BCV62AE6327HTSA1
TRANSISTORS - Transistors (BJT) - Arrays - BCV62AE6327HTSA1 1022757-BCV62AE6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1022757-BCV62AE6327H TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 PNP (Dual) Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: PG-SOT143-4 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 650mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA (ICBO) Typical Gain (hFE) (Min): 125 @ 2mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1022757-BCV62AE6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 PNP (Dual)
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT143-4
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 650mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA (ICBO)
Typical Gain (hFE) (Min): 125 @ 2mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays - BCV62AE6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
BCV62AE6327HTSA1TR-ND
Bipolar Transistor Arrays BCV62AE6327HTSA1TR-ND
Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 250MHz 300mW Surface Mount PG-SOT-143-3D

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 250MHz 300mW Surface Mount PG-SOT-143-3D

Buy Now Datasheet
Singapore
30V 0.1A Bipolar Transistor
277-BCV62AE6327HTSA1
30V 0.1A Bipolar Transistor 277-BCV62AE6327HTSA1
TRANS 2PNP 30V 0.1A SOT143 Product overview: BCV62AE6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 0.1A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BCV62AE6327HTSA1 can be used for catalog matching and distributor lookup.

TRANS 2PNP 30V 0.1A SOT143 Product overview: BCV62AE6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 30V, 0.1A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BCV62AE6327HTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCV62AE6327HTSA1
Bipolar Transistors - BJT BCV62AE6327HTSA1
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A

Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCV62AE6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCV62AE6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCV62AE6327HTSA1
TRANS 2PNP 30V 0.1A SOT143

TRANS 2PNP 30V 0.1A SOT143

Supplier's Site
Trans, Pnp, Dual, -30V, Sot143; Transistor Polarity Infineon - 03AJ0035 - Newark, An Avnet Company
Chicago, IL, United States
Trans, Pnp, Dual, -30V, Sot143; Transistor Polarity Infineon
03AJ0035
Trans, Pnp, Dual, -30V, Sot143; Transistor Polarity Infineon 03AJ0035
TRANS, PNP, DUAL, -30V, SOT143; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-143; No. of RoHS Compliant: Yes

TRANS, PNP, DUAL, -30V, SOT143; Transistor Polarity:Dual PNP; Collector Emitter Voltage V(br)ceo:-30V; Power Dissipation Pd:300mW; DC Collector Current:-100mA; DC Current Gain hFE:125hFE; Transistor Case Style:SOT-143; No. of RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 1022757-BCV62AE6327HTSA1 BCV62AE6327HTSA1TR-ND 277-BCV62AE6327HTSA1 BCV62AE6327HTSA1 BCV62AE6327HTSA1 03AJ0035
Product Name TRANSISTORS - Transistors (BJT) - Arrays - BCV62AE6327HTSA1 Bipolar Transistor Arrays 30V 0.1A Bipolar Transistor Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans, Pnp, Dual, -30V, Sot143; Transistor Polarity Infineon
Polarity PNP; 2 PNP (Dual) PNP PNP PNP
Package Type SOT3; PG-SOT143-4 TO-253-4, TO-253AA Tape & Reel (TR) SOT143; PG-SOT-143-3D TO-3; SOT143
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
VCEO 30 volts 30 volts
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