Infineon Technologies AG BFR740EL3E6829XTSA1

Description
RF Small Signal Bipolar Transistor
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Description
RF Small Signal Bipolar Transistor
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Datasheet
Datasheet Summary
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The BFR740EL3 is a silicon germanium carbon NPN RF bipolar transistor designed for low-noise, high-frequency applications in wireless communications, satellite systems, and lidar. It is packaged in a TSLP-3-10 leadless surface-mount package with a peak collector current rating of 40 mA, a maximum collector-emitter voltage of 4.0 V, and a total power dissipation of 160 mW at 105 °C. It achieves a minimum noise figure of 0.5 dB at 1.9 GHz and 0.8 dB at 5.5 GHz with 6 mA bias, and provides a maximum power gain of 20 dB at 5.5 GHz. The device has a transition frequency of 42 GHz and meets JEDEC standards for industrial applications.

Datasheet Summary
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The BFR740EL3 is a silicon germanium carbon NPN RF bipolar transistor designed for low-noise, high-frequency applications in wireless communications, satellite systems, and lidar. It is packaged in a TSLP-3-10 leadless surface-mount package with a peak collector current rating of 40 mA, a maximum collector-emitter voltage of 4.0 V, and a total power dissipation of 160 mW at 105 °C. It achieves a minimum noise figure of 0.5 dB at 1.9 GHz and 0.8 dB at 5.5 GHz with 6 mA bias, and provides a maximum power gain of 20 dB at 5.5 GHz. The device has a transition frequency of 42 GHz and meets JEDEC standards for industrial applications.

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 - BFR740EL3E6829XTSA1 - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor

RF Small Signal Bipolar Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number BFR740EL3E6829XTSA1
Package Type PG-TSLP-3
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