Infineon Technologies AG TRANSISTORS - RF Transistors (BJT) - BFP196WE6327HTSA1 BFP196WE6327HTSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 115391-BFP196WE6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12.5dB to 19dB
Frequency - Transition: 7.5GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.3dB to 2.3dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT343-4
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 50mA, 8V
Maximum Power Dissipation: 700mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

RF TRANS NPN 12V 7.5GHZ SOT343-4 Product overview: BFP196WE6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 7.5GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 7.5GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFP196WE6327HTSA1 can be used for catalog matching and distributor lookup.

RF Transistor NPN 12V 150mA 7.5GHz 700mW Surface Mount PG-SOT343-4