Manufacturer: Infineon Technologies
Win Source Part Number: 096741-BFS481H6327XT
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 20dB
Frequency - Transition: 8GHz
Transistor Polarity: 2 NPN (Dual)
Noise Figure (dB Typ @ f): 0.9dB to 1.2dB @ 900MHz to 1.8GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: P-SOT363-6
Maximum Current Collector: 20mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 5mA, 8V
Maximum Power Dissipation: 175mW
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient
RF TRANS 2 NPN 12V 8GHZ SOT363-6
Infineon RF BIP TRANSISTORS BFS481H6327X
Infineon RF BIP TRANSISTORS BFS481H6327X
RF TRANS 2 NPN 12V 8GHZ SOT363-6 Product overview: BFS481H6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 8GHZ. Search-friendly keywords include transistor, BJT, switching, amplification, 12V, 8GHZ, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-BFS481H6327XTSA1
RF Transistor 2 NPN (Dual) 12V 20mA 8GHz 175mW Surface Mount P-SOT363-6
RF Transistor 2 NPN (Dual) 12V 20mA 8GHz 175mW Surface Mount P-SOT363-6
RF Transistor 2 NPN (Dual) 12V 20mA 8GHz 175mW Surface Mount P-SOT363-6
RF TRANS 2 NPN 12V 8GHZ SOT363-6
Bipolar - RF Transistor, Dual NPN, 12 V, 8 GHz, 175 mW, 20 mA, 70 RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 096741-BFS481H6327XTSA1 | BFS481H6327XTSA1 | 2737308 | 283-BFS481H6327XTSA1 | BFS481H6327XTSA1CT-ND | BFS481H6327XTSA1 | 50Y1773 |
| Product Name | TRANSISTORS - RF Transistors (BJT) - BFS481H6327XTSA1 | Bipolar RF Transistors | Bipolar Transistors | 12V 8GHZ Bipolar Transistor | Bipolar RF Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Rf Transistor, Dual Npn, 12 V, 8 Ghz, 175 Mw, 20 Ma, 70 Rohs Compliant Infineon |
| Polarity | NPN; 2 NPN (Dual) | 2 NPN (Dual); NPN | NPN | NPN | |||
| Package Type | SOT3; P-SOT363-6 | 6-VSSOP, SC-88, SOT-363 | SOT-363 | Tape & Reel (TR) | 6-VSSOP, SC-88, SOT-363 | TO-3 | |
| IC(max) | 20 milliamps | 20 milliamps | |||||
| VCEO | 12 volts | 12 volts | 12 volts | ||||
| Power Gain | 20 dB | 20 dB |
