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ROHM Semiconductor USA, LLC Datasheets for Metal-Oxide Semiconductor FET (MOSFET)

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more

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Product Name Notes
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD.
BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation.
BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.
BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation.
BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet...
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet...
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet...
Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.
Half bridge module consisting of ROHM SiC-DMOSFETs.
HP8K22 is low on-resistance MOSFET for DC/DC converter.
HP8K24 is the high reliability transistor, suitable for switching and DC/DC converter.
HP8S36 is low on-resistance MOSFET for switching application.
MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to...
Nch 600V 25A Power MOSFET
Nch 600V 30A Power MOSFET
Nch 600V 35A Power MOSFET
Nch 600V 46A Power MOSFET
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various...
QH8K22 is low on - resistance MOSFET for Switching.
QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive.
QS8K51 is low on-resistance and Small Surface Mount Package MOSFET for switching application.
R5007FNX is Power MOSFET for Switching Power Supply.
R6004KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6007KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6009KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6011KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6015KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6020ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .
R6020KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6024ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .
R6024KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6030KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6030MNX is fast trr power MOSFET, suitable for switching power supply.
R6047ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .
R6076ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance .
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs...
ROHM recommends RE1C001UN as standard spec.
ROHM recommends RU1C001UN as standard spec.
ROHM recommends RUM001L02 as standard spec.
The Middle Power MOSFET QH8MA2 is suitable for switching power supply.
This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.
Transistor

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