ROHM Semiconductor USA, LLC Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD. | |
| BSM180C12P3C202 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation. | |
| BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode. | |
| BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motro drive, converter, photovoltaics, wind power generation. | |
| BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode. | |
| Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs. | |
| HP8K22 is low on-resistance MOSFET for DC/DC converter. | |
| HP8K24 is the high reliability transistor, suitable for switching and DC/DC converter. | |
| HP8S36 is low on-resistance MOSFET for switching application. | |
| MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. | |
| MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to... | |
| Nch 600V 25A Power MOSFET | |
| Nch 600V 30A Power MOSFET | |
| Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various... | |
| QH8K22 is low on - resistance MOSFET for Switching. | |
| QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive. | |
| QS8K51 is low on-resistance and Small Surface Mount Package MOSFET for switching application. | |
| R5007FNX is Power MOSFET for Switching Power Supply. | |
| R6004KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6007KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6009KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6011KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6015KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6020ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| R6020KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6024ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| R6024KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| R6030KNX is Low on-resistance and ultra fast switching speed Power MOSFET. | |
| ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs... | |
| ROHM recommends RE1C001UN as standard spec. | |
| ROHM recommends RU1C001UN as standard spec. | |
| ROHM recommends RUM001L02 as standard spec. | |
| The Middle Power MOSFET QH8MA2 is suitable for switching power supply. | |
| This product is a chopper module consisting of SiC-DMOSFET and SiC-SBD from ROHM. | |
| This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. | |
| Transistor |
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