ROHM Semiconductor USA, LLC Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
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| Product Name | Notes |
|---|---|
| 1700V 3.7A N-channel SiC (Silicon Carbide) power MOSFET. ROHM Featured Products SCT2H12NZ(1700V SiC-MOSFET) and BD7682FJ-LB(AC/DC Converter IC) Evaluation Board Apprication Note (PDF: 1.9MB), Presentation Document (PDF: 1.0MB), Buy Evaluation Board... | |
| 400V 20A N-channel SiC power MOSFET for Audio | |
| 650V 29A N-channel SiC power MOSFET | |
| Automotive MOSFETs | |
| Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet... | |
| Middle Power MOSFET SH8K25 is suitable for switching power supply. | |
| Middle Power MOSFET SH8K26 is suitable for switching power supply. | |
| MOSFET, one of Fild Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. | |
| MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to... | |
| Nch 40V 30A Power MOSFET for High-Efficiency DC/DC converter application and Motor Drivers | |
| Nch 600V 25A Power MOSFET | |
| Nch 600V 30A Power MOSFET | |
| Nch 600V 35A Power MOSFET | |
| Nch 600V 46A Power MOSFET | |
| Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various... | |
| QH8K22 is low on - resistance MOSFET for Switching. | |
| QH8K26 is low on-resistance and Small Surface Mount Package MOSFET for switching and motor drive. | |
| QS8K51 is low on-resistance and Small Surface Mount Package MOSFET for switching application. | |
| R6020ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| R6024ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| R6047ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| R6076ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . | |
| RHP020N06FRA is the high reliability Automotive MOSFET. | |
| RHP030N03FRA is the high reliability Automotive MOSFET. | |
| RJP020N06FRA is the high reliability Automotive MOSFET. | |
| RK7002BMHZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver. | |
| ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs... | |
| ROHM recommends RE1C001UN as standard spec. | |
| ROHM recommends RE1C002UN as standard spec. | |
| ROHM recommends RE1E002SP as standard spec. | |
| ROHM recommends RE1J002YN as standard spec. | |
| ROHM recommends RE1L002SN as standard spec. | |
| ROHM recommends RRR030P03 as standard spec. | |
| ROHM recommends RU1C001UN as standard spec. | |
| ROHM recommends RU1E002SP as standard spec. | |
| ROHM recommends RUM001L02 as standard spec. | |
| ROHM recommends RZF013P01 as standard spec. | |
| ROHM recommends RZF020P01 as standard spec. | |
| RQ3E180BN is low on-resistance and high power package MOSFET for switching application. | |
| RS1E180BN is low on-resistance and high power small mold package MOSFET for switching application. | |
| RSD200N05FRA is the high reliability Automotive MOSFET. | |
| RSJ250P10FRA is the high reliability Automotive MOSFET. | |
| RSJ400N10FRA is the high reliability Automotive MOSFET. | |
| RSJ550N10FRA is the high reliability Automotive MOSFET. | |
| RSJ650N10FRA is the high reliability Automotive MOSFET. | |
| RSQ035N06FRAis the high reliability Automotive MOSFET, suitable for switching application. | |
| RSS065N06FRA is the high reliability Automotive MOSFET, suitable for switching application. | |
| RSS090N03FRA is the high reliability Automotive transistor, suitable for switching applications. | |
| RSS095N05FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive. | |
| RSS100N03FRA is the high reliability automotive MOSFET, suitable for switching application. | |
| RTQ020N05FRA is the high reliability Automotive MOSFET, suitable for the switching application. | |
| RUC002N05HZGis the high reliability Automotive MOSFET, suitable for switching and low-side load switch, relay driver. | |
| RV3CA01ZP is the 0604 size ultra-small package MOSFET for for portable devices. | |
| RXL035N03 is low on-resistance and small surface mount package MOSFET for switching application. | |
| SCT3030AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3040KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3080AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| SCT3080KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. This new series adopts a... | |
| SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is... | |
| Small surface mount package RQ6C050UN is suitable for Switching applications. | |
| The small package(1006size) RV2C014BC is suitable for portable devices. | |
| The Ultra Small Package(0806size). | |
| The ultra-small package RV3C001ZP is suitable for portable devices. | |
| The ultra-small package RV3C002UN is suitable for portable devices. | |
| The ultra-small package(1006size) RV2C001ZP is suitable for portable devices. | |
| The ultra-small package(1006size) RV2C002UN is suitable for portable devices. | |
| This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed. | |
| Transistor |
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