The QS5U13 is a 30V N-channel MOSFET with an integrated Schottky barrier diode in a TSMT5 package, designed for load switching and DC/DC conversion. It features a 2.5V drive capability, a maximum on-state resistance of 154mΩ at 2.5V gate drive, and a continuous drain current of ±2.0A. The device has a total power dissipation of 1.25W and operates within a junction temperature range of -55°C to +150°C. It is RoHS compliant and uses Pb-free lead plating.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS5U13 | QS5U13 |
| Product Name | 2.5V Drive Nch+SBD MOSFET | 2.5V Drive Nch+SBD MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 2000 milliamps | 2000 milliamps |
| PD | 900 milliwatts | 900 milliwatts |
