QS6K1FRA is a dual N-channel MOSFET with built-in gate-source protection diodes, designed for power switching and DC/DC converter applications. It is housed in a TSMT6 surface-mount package measuring 6.1 mm × 3.0 mm × 1.0 mm max. Both internal FETs feature a 30 V drain-source voltage rating, ±1.0 A continuous drain current, and a maximum total power dissipation of 1.25 W. On-state resistance is specified at 180 mΩ to 252 mΩ at 4.5 V and 260 mΩ to 364 mΩ at 2.5 V gate drive. The device is AEC-Q101 qualified and supplied in tape and reel packaging with a minimum order quantity of 3000 pieces.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6K1FRA | QS6K1FRA |
| Product Name | 2.5V Drive Nch+Nch MOSFET (AEC-Q101 Qualified) | 2.5V Drive Nch+Nch MOSFET (Corresponds to AEC-Q101) |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 30 volts | 30 volts |
| IDSS | 1000 milliamps | 1000 milliamps |
| PD | 1250 milliwatts | 1250 milliwatts |
