R6007ENJ is a N-channel 600V 7A power MOSFET in a TO-263S package, designed for switching applications. It has a maximum drain-source on-resistance of 0.62 Ω at 25°C and can handle continuous drain current up to 7 A at 25°C junction temperature. The device supports a gate-source voltage of ±20 V and dissipates up to 78 W at 25°C. Its junction temperature range is -55°C to +150°C, and it meets RoHS standards with lead-free plating. Thermal resistance from junction to case is 1.6°C/W, and the part is packaged in tape and reel for surface-mount assembly.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6007ENJ | R6007ENJ |
| Product Name | 600V 7A TO-263, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 7000 milliamps | 7000 milliamps |
| QG | 20 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
