The R6015ENJ is an N-channel 600V 15A power MOSFET in a TO-263 package, designed for switching applications. It has a maximum drain-source on-resistance of 0.29Ω at 25°C and dissipates up to 184W with a junction temperature range of -55°C to 150°C. The gate-source voltage is guaranteed up to ±20V, and the device is RoHS compliant. Its thermal resistance from junction to case is 0.68°C/W, and when mounted on a standard FR4 PCB, the junction-to-ambient thermal resistance is 80°C/W. The device supports avalanche energy of 284mJ per pulse and features fast switching with a turn-off delay time of 105ns and a fall time of 45ns at specified conditions.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6015ENJ | R6015ENJ |
| Product Name | 600V 15A TO-263, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 15000 milliamps | 15000 milliamps |
| QG | 40 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
