MOSFET 2N-CH 30V 1A TSMT6
MOSFET 2N-CH 30V 1A TSMT6 Product overview: QS6K1TR from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-QS6K1TR can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 30V 1A 1.25W Surface Mount TSMT6 (SC-95)
Mosfet Array 2 N-Channel (Dual) 30V 1A 1.25W Surface Mount TSMT6 (SC-95)
Mosfet Array 2 N-Channel (Dual) 30V 1A 1.25W Surface Mount TSMT6 (SC-95)
Manufacturer: Rohm Semiconductor
Win Source Part Number: 115003-QS6K1TR
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: QS6K1
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TSMT6 (SC-95)
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1A
Gate-Source Threshold Voltage: 1.5V @ 1mA
Max Gate Charge: 2.4nC @ 4.5V
Max Input Capacitance: 77pF @ 10V
Maximum Rds On at Id,Vgs: 238 mOhm @ 1A, 4.5V
Alternative Parts (Cross-Reference): QS6K1;
Introduction Date: November 12, 2002
ECCN: EAR99
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 30V 1A TSMT6
MOSFET, DUAL, NN, 30V, 1A; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:1A; On Resistance Rds(on):0.364ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET 2N-CH 30V 1A TSMT6
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6K1TR | 289-QS6K1TR | QS6K1TR-ND | 115003-QS6K1TR | QS6K1TR | QS6K1TR | 74M4156 | 687-QS6K1TR |
| Product Name | FET, MOSFET Arrays | 30V 1A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS6K1TR | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual, Nn, 30V, 1A; Transistor Polarity Rohm | MOSFET 2N-CH 30V 1A TSMT6 |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| IDSS | 1000 milliamps | 1000 milliamps | ||||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) |
