The R6024ENJ is an N-channel 600V 24A power MOSFET in a TO-263 package, designed for switching applications. It has a maximum drain-source on-resistance of 0.165Ω at 25°C and can handle a continuous drain current of ±24A at 25°C, reducing to ±13.0A at 100°C. The device supports a pulsed drain current of ±72A and dissipates up to 245W at 25°C. Its gate-source voltage rating is ±20V, and it is RoHS compliant with Pb-free lead plating. The junction temperature ranges from -55°C to 150°C, with a thermal resistance from junction to case of 0.51°C/W. It features fast switching speed and low gate charge, enabling simple drive circuits and parallel operation.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6024ENJ | R6024ENJ |
| Product Name | 600V 24A TO-263, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 24000 milliamps | 24000 milliamps |
| QG | 70 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
