ROHM Semiconductor USA, LLC 4V Drive Nch+SBD MOSFET ES6U3

Description
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Datasheet
Description
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Datasheet

Suppliers

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4V Drive Nch+SBD MOSFET - ES6U3 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
4V Drive Nch+SBD MOSFET
ES6U3
4V Drive Nch+SBD MOSFET ES6U3
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor USA, LLC
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number ES6U3
Product Name 4V Drive Nch+SBD MOSFET
Polarity N-Channel
V(BR)DSS 30 volts
IDSS 1400 milliamps
PD 700 milliwatts
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