The R6020ENJ is an N-channel 600V 20A power MOSFET in a TO-263S package, designed for switching applications. It has a maximum on-resistance of 0.196Ω at 25°C and a continuous drain current of ±20A at 25°C. The device supports a peak pulsed drain current of ±60A and operates with a gate-source voltage up to ±20V. It features fast switching speeds and is RoHS compliant with Pb-free lead plating. The thermal resistance from junction to case is 0.54°C/W, and the maximum junction temperature is 150°C. The operating and storage temperature range is -55°C to +150°C.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6020ENJ | R6020ENJ |
| Product Name | 600V 20A TO-263, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 20000 milliamps | 20000 milliamps |
| QG | 60 nC | |
| PD | 40000 milliwatts | 40000 milliwatts |
