Win Source Part Number: 1063370-HP8MA2TB1
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 15A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, 17.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power - Max: 3W (Ta)
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-HSOP
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V, 1250pF @ 15V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: HP8MA2TB1CT,HP8MA2TB
Base Product Number: HP8MA2
MOSFET N/P-CH 30V 18A/15A 8HSOP Product overview: HP8MA2TB1 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18A, 15A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18A, 15A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-HP8MA2TB1 can be used for catalog matching and distributor lookup.
Mosfet Array N and P-Channel 30V 18A (Ta), 15A (Ta) 3W (Ta) Surface Mount 8-HSOP
Mosfet Array N and P-Channel 30V 18A (Ta), 15A (Ta) 3W (Ta) Surface Mount 8-HSOP
Mosfet Array N and P-Channel 30V 18A (Ta), 15A (Ta) 3W (Ta) Surface Mount 8-HSOP
MOSFET N/P-CH 30V 18A/15A 8HSOP
HP8MA2 IS LOW ON-RESISTANCE AND
MOSFET, N& P-CH, 30V, HSOP; Transistor Polarity:N and P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1063370-HP8MA2TB1 | 289-HP8MA2TB1 | HP8MA2TB1TR-ND | HP8MA2TB1 | HP8MA2TB1 | 10AC7464 | HP8MA2TB1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | 30V 18A 15A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays | Mosfet, N& P-Ch, 30V, Hsop; Transistor Polarity Rohm | MOSFET |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; N and P-Channel | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | SOT3 | Tape & Reel (TR) | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| Transconductance | 0.0085 to 0.0090 kS |
