R6007KNX is a N-channel Power MOSFET with a maximum drain-source voltage of 600V and a continuous drain current rating of ¬±7A. It features a low on-resistance of 0.62Oc, which contributes to its efficiency in power applications. The device is designed for high-speed switching, making it suitable for various applications that require rapid response times. It has a power dissipation capability of 46W and can handle pulsed drain currents up to ¬±21A. The MOSFET is RoHS compliant and has Pb-free plating, ensuring it meets environmental standards. Its thermal resistance from junction to case is 2.7¬8C/W, and it operates within a junction temperature range of -55¬8C to +150¬8C. The product is packaged in a TO-220FM format, facilitating easy integration into circuits.
R6007KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6007KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
N-Channel 600V 7A (Tc) 46W (Tc) Through Hole TO-220FM
MOSFET N-CH 600V 7A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6007KNX | R6007KNX | 846-R6007KNX-ND | R6007KNX | R6007KNX |
| Product Name | Nch 600V 7A Power MOSFET | 600V 7A TO-220FM, High-speed switching Power MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | |||
| IDSS | 7000 milliamps | 7000 milliamps | |||
| QG | 14.5 nC | 14.5 nC | |||
| PD | 46000 milliwatts | 46000 milliwatts |
