R6015ENZ is an N-channel 600V 15A power MOSFET in a TO-3PF package, designed for switching applications. It has a maximum on-resistance of 0.29Ω at 25°C, a continuous drain current of ±15A at 25°C, and a power dissipation of 120W. The device features fast switching, a gate-source voltage rating of ±20V, and is RoHS compliant. Thermal resistance from junction to case is 1.04°C/W, and from junction to ambient is 40°C/W. The operating junction and storage temperature range is from -55°C to +150°C.
R6015ENZ is a power MOSFET with low ON-resistance and fast switching, suitable for the switching application.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | R6015ENZ | R6015ENZ |
| Product Name | 600V 15A TO-3PF, Low-noise Power MOSFET | 10V Drive Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 600 volts | 600 volts |
| IDSS | 15000 milliamps | 15000 milliamps |
| QG | 40 nC | |
| PD | 120000 milliwatts | 120000 milliwatts |
