The EM6K7 is a dual N-channel MOSFET in an SOT-563 package, designed for low-voltage switching in portable equipment. Each element has a maximum drain-source voltage of 20 V and a continuous drain current of ±200 mA, with a maximum on-resistance of 1.2 Ω at 1.8 V gate drive. Total power dissipation is 150 mW, and the device is RoHS compliant. Operating junction temperature ranges from -55°C to +150°C. The package dimensions and thermal resistance values are specified for mounting on standard reference footprints.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | EM6K7 | EM6K7 |
| Product Name | 1.2V Drive Nch+Nch MOSFET | 1.2V Drive Nch+Nch MOSFET |
| Polarity | N-Channel | N-Channel |
| V(BR)DSS | 20 volts | 20 volts |
| IDSS | 200 milliamps | 200 milliamps |
| PD | 150 milliwatts | 150 milliwatts |
