The QS6U22 is a P-channel MOSFET with an integrated Schottky barrier diode in a TSMT6 package, designed for low-voltage (2.5V) switching applications. It has a drain-source voltage rating of -20 V, continuous drain current of ±1.5 A, and total power dissipation of 1.25 W. The MOSFET exhibits a maximum on-resistance of 430 mΩ at -2.5 V gate drive and 215 mΩ at -4.5 V gate drive. The integrated Schottky diode has a reverse voltage rating of 20 V and forward voltage of 0.49 V at 0.7 A. The device is RoHS compliant and operates over a junction temperature range of -55°C to +150°C.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1241326-QS6U22
Manufacturer Homepage: www.rohm.com
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Small switching (-20V, -1.5A) Product overview: QS6U22 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -20V, -1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -20V, -1.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-QS6U22 can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | QS6U22 | QS6U22 | 1241326-QS6U22 | 285-QS6U22 |
| Product Name | 2.5V Drive Pch+SBD MOSFET | 2.5V Drive Pch+SBD MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - QS6U22 | -20V -1.5A MOSFET Transistor |
| Polarity | P-Channel | P-Channel | ||
| V(BR)DSS | -20 volts | -20 volts | ||
| IDSS | -1500 milliamps | -1500 milliamps | ||
| PD | 900 milliwatts | 900 milliwatts |
